ZXT13N20DE6TA
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- Mfr.Part #
- ZXT13N20DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A SOT23-6
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 20V
- Max Breakdown Voltage :
- 20V
- Continuous Collector Current :
- 4.5A
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Current Rating :
- 4.5A
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 96MHz
- Published :
- 2006
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 96MHz
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 45mA, 4.5A
- Length :
- 3.1mm
- Collector Emitter Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Number of Terminations :
- 6
- JESD-609 Code :
- e3
- Base Part Number :
- ZXT13N20D
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Collector Current :
- 4.5A
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.7W
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.1W
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 1.8mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Weight :
- 14.996898mg
- Height :
- 1.3mm
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 170mV
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 7.5V
- Package / Case :
- SOT-23-6
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 96MHz
- Mounting Type :
- Surface Mount
- Datasheets
- ZXT13N20DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13N20DE6TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 170mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 230mV @ 45mA, 4.5A.Continuous collector voltages of 4.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7.5V.Its current rating is 4.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 96MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 4.5A volts.
ZXT13N20DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 230mV @ 45mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 96MHz
ZXT13N20DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13N20DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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