ZXT13N20DE6TA
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- Mfr.Part #
- ZXT13N20DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A SOT23-6
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Power Dissipation :
- 1.7W
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Width :
- 1.8mm
- Package / Case :
- SOT-23-6
- Number of Pins :
- 6
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 96MHz
- Pbfree Code :
- yes
- Pin Count :
- 6
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA
- Height :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 45mA, 4.5A
- Weight :
- 14.996898mg
- Published :
- 2006
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 4.5A
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Frequency :
- 96MHz
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- ZXT13N20D
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7.5V
- Length :
- 3.1mm
- Collector Emitter Saturation Voltage :
- 170mV
- Gain Bandwidth Product :
- 96MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.1W
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Current Rating :
- 4.5A
- Collector Emitter Breakdown Voltage :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Datasheets
- ZXT13N20DE6TA
ZXT13N20DE6TA Documents
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13N20DE6TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 170mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 230mV @ 45mA, 4.5A.Continuous collector voltages of 4.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7.5V.Its current rating is 4.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 96MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 4.5A volts.
ZXT13N20DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 230mV @ 45mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 96MHz
ZXT13N20DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13N20DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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