ZXT12P20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

200mV @ 125mA, 2.5A

Collector Emitter Saturation Voltage :

-160mV

Width :

3.1mm

Base Part Number :

ZXT12P20D

RoHS Status :

RoHS Compliant

JESD-30 Code :

S-PDSO-G8

Emitter Base Voltage (VEBO) :

7.5V

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

-25V

Height :

950μm

Transition Frequency :

110MHz

Pin Count :

8

Length :

3.1mm

Current Rating :

-2.5A

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

JEDEC-95 Code :

MO-187AA

Current - Collector Cutoff (Max) :

100nA

Transistor Type :

2 PNP (Dual)

Weight :

139.989945mg

Max Power Dissipation :

1.04W

Gain Bandwidth Product :

110MHz

Max Collector Current :

2.5A

Lead Free :

Contains Lead

ECCN Code :

EAR99

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Voltage - Rated DC :

-20V

Collector Emitter Voltage (VCEO) :

200mV

Continuous Collector Current :

-2.5A

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Power - Max :

1.04W

Mount :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

20V

Number of Elements :

2

Qualification Status :

Not Qualified

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

20V