ZXT12P20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

-25V

Weight :

139.989945mg

Collector Emitter Voltage (VCEO) :

200mV

JESD-609 Code :

e3

Transition Frequency :

110MHz

JESD-30 Code :

S-PDSO-G8

Lead Free :

Contains Lead

Pin Count :

8

Polarity :

PNP

Current - Collector Cutoff (Max) :

100nA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-160mV

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

7.5V

Max Collector Current :

2.5A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 125mA, 2.5A

Collector Emitter Breakdown Voltage :

20V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

JEDEC-95 Code :

MO-187AA

Transistor Type :

2 PNP (Dual)

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Base Part Number :

ZXT12P20D

Current Rating :

-2.5A

Mounting Type :

Surface Mount

Number of Elements :

2

Height :

950μm

Continuous Collector Current :

-2.5A

Max Power Dissipation :

1.04W

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Gain Bandwidth Product :

110MHz

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Max Breakdown Voltage :

20V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Length :

3.1mm

Peak Reflow Temperature (Cel) :

260

Power - Max :

1.04W

Voltage - Rated DC :

-20V

Mount :

Surface Mount

Width :

3.1mm