ZXT12P12DXTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

2 PNP (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

S-PDSO-G8

Current Rating :

-3A

Max Power Dissipation :

1.04W

RoHS Status :

RoHS Compliant

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

JEDEC-95 Code :

MO-187AA

Max Collector Current :

3A

Packaging :

Tape and Reel (TR)

Transition Frequency :

85MHz

Continuous Collector Current :

-3A

Terminal Form :

Gull wing

Lead Free :

Lead Free

Voltage - Rated DC :

-12V

Number of Terminations :

8

Weight :

139.989945mg

Polarity :

PNP

Gain Bandwidth Product :

85MHz

Height :

950μm

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

-20V

Current - Collector (Ic) (Max) :

3A

Collector Emitter Saturation Voltage :

-140mV

Element Configuration :

Dual

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

7.5V

Base Part Number :

ZXT12P12D

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Length :

3.1mm

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

12V

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Width :

3.1mm

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

270mV