ZXT12P12DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Gain Bandwidth Product :

85MHz

Lead Free :

Lead Free

Pin Count :

8

Transition Frequency :

85MHz

Collector Base Voltage (VCBO) :

20V

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Radiation Hardening :

No

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Mount :

Surface Mount

ECCN Code :

EAR99

Continuous Collector Current :

-3A

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Number of Elements :

2

Emitter Base Voltage (VEBO) :

7.5V

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

12V

Base Part Number :

ZXT12P12D

Max Collector Current :

3A

Element Configuration :

Dual

Transistor Application :

SWITCHING

Current Rating :

-3A

JESD-609 Code :

e3

Power - Max :

1.04W

Collector Emitter Saturation Voltage :

-150mV

Collector Emitter Breakdown Voltage :

12V

Power Dissipation :

1.25W

Current - Collector Cutoff (Max) :

100nA

Width :

3.1mm

Polarity :

PNP

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Max Breakdown Voltage :

12V

Weight :

139.989945mg

Number of Terminations :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Height :

950μm

Length :

3.1mm

Voltage - Rated DC :

-12V

Frequency :

85MHz

Number of Pins :

8

Transistor Type :

2 PNP (Dual)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.25W