ZXT12N50DXTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

100V

Factory Lead Time :

15 Weeks

Transistor Type :

2 NPN (Dual)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.04W

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 3A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Radiation Hardening :

No

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

7.5V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Published :

2006

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

135mV

Height :

950μm

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Width :

3.1mm

Weight :

139.989945mg

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Number of Pins :

8

Pin Count :

8

JESD-609 Code :

e3

Gain Bandwidth Product :

132MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Continuous Collector Current :

3A

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Number of Elements :

2

Current Rating :

3A

Transition Frequency :

132MHz

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Length :

3.1mm

Polarity :

NPN

Base Part Number :

ZXT12N50D

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

100nA