ZXT12N50DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

8

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Number of Pins :

8

Gain Bandwidth Product :

132MHz

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

135mV

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Height :

950μm

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

100V

Polarity :

NPN

Max Collector Current :

3A

Mounting Type :

Surface Mount

Base Part Number :

ZXT12N50D

Terminal Form :

Gull wing

Width :

3.1mm

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Current Rating :

3A

Peak Reflow Temperature (Cel) :

260

Length :

3.1mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 3A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Power - Max :

1.04W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA

Max Breakdown Voltage :

50V

Continuous Collector Current :

3A

Emitter Base Voltage (VEBO) :

7.5V

Frequency :

132MHz

Max Power Dissipation :

1.25W

JESD-609 Code :

e3

Transistor Type :

2 NPN (Dual)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Transition Frequency :

132MHz

Power Dissipation :

1.25W

Lead Free :

Lead Free

Voltage - Rated DC :

50V

Number of Elements :

2

Weight :

139.989945mg