ZXT12N50DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

50V

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Saturation Voltage :

135mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Published :

2006

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Length :

3.1mm

Frequency :

132MHz

Current Rating :

3A

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

Max Collector Current :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Power Dissipation :

1.25W

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Width :

3.1mm

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 3A

Power - Max :

1.04W

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Transistor Type :

2 NPN (Dual)

Gain Bandwidth Product :

132MHz

Weight :

139.989945mg

Pbfree Code :

yes

Transition Frequency :

132MHz

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Pin Count :

8

Height :

950μm

ECCN Code :

EAR99

Lead Free :

Lead Free

Continuous Collector Current :

3A

Max Power Dissipation :

1.25W

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

7.5V

Radiation Hardening :

No

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Number of Pins :

8

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

100nA

Base Part Number :

ZXT12N50D

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8