ZXT12N20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Weight :

139.989945mg

Mounting Type :

Surface Mount

Width :

3.1mm

Power Dissipation :

1.25W

Gain Bandwidth Product :

112MHz

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Base Part Number :

ZXT12N20D

Height :

950μm

Transition Frequency :

112MHz

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

20V

Frequency :

112MHz

Current - Collector Cutoff (Max) :

100nA

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Collector Base Voltage (VCBO) :

50V

Power - Max :

1.04W

Length :

3.1mm

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Polarity :

NPN

Current Rating :

3.5A

Transistor Type :

2 NPN (Dual)

Voltage - Rated DC :

20V

Max Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Max Collector Current :

3.5A

Pbfree Code :

yes

Continuous Collector Current :

3.5A

Terminal Form :

Gull wing

Number of Elements :

2

Pin Count :

8

Element Configuration :

Dual

Published :

2006

Collector Emitter Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

160mV

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 50mA, 3.5A

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7.5V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8