ZXT12N20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.25W

Base Part Number :

ZXT12N20D

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

7.5V

Transistor Type :

2 NPN (Dual)

Transistor Application :

SWITCHING

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

ECCN Code :

EAR99

Max Breakdown Voltage :

20V

Height :

950μm

Transition Frequency :

112MHz

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

20V

Power Dissipation :

1.25W

Voltage - Rated DC :

20V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 50mA, 3.5A

Weight :

139.989945mg

Continuous Collector Current :

3.5A

Packaging :

Tape and Reel (TR)

Width :

3.1mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA

Number of Terminations :

8

Max Collector Current :

3.5A

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

50V

Published :

2006

Number of Elements :

2

JESD-609 Code :

e3

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Pins :

8

Mounting Type :

Surface Mount

Current Rating :

3.5A

Collector Emitter Saturation Voltage :

160mV

Mount :

Surface Mount

Length :

3.1mm

Collector Emitter Voltage (VCEO) :

20V

Gain Bandwidth Product :

112MHz

Peak Reflow Temperature (Cel) :

260

Frequency :

112MHz

Power - Max :

1.04W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)