ZXT11N20DFTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

40V

Collector Emitter Breakdown Voltage :

20V

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Collector Current :

2.5A

Gain Bandwidth Product :

160MHz

Power Dissipation :

806mW

Length :

3.05mm

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

7.5V

Height :

1mm

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

130mV @ 250mA, 2.5A

Lead Free :

Lead Free

Width :

1.4mm

Continuous Collector Current :

2.5A

Pin Count :

3

Max Breakdown Voltage :

20V

Number of Pins :

3

Voltage - Rated DC :

20V

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Base Part Number :

ZXT11N20D

Transition Frequency :

160MHz

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

20V

Current Rating :

2.5A

Collector Emitter Saturation Voltage :

90mV

Current - Collector Cutoff (Max) :

100nA

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Radiation Hardening :

No

Weight :

7.994566mg

Max Power Dissipation :

625mW

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Frequency :

160MHz

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3