ZXT11N20DFTA
- Mfr.Part #
- ZXT11N20DFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2.5A SOT23-3
- Stock
- 1,801
- In Stock :
- 1,801
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Transition Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZXT11N20D
- Collector Emitter Voltage (VCEO) :
- 20V
- Voltage - Rated DC :
- 20V
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Frequency :
- 160MHz
- Emitter Base Voltage (VEBO) :
- 7.5V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 2.5A
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 806mW
- Mount :
- Surface Mount
- Current Rating :
- 2.5A
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 90mV
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 250mA, 2.5A
- Gain Bandwidth Product :
- 160MHz
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Length :
- 3.05mm
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Height :
- 1mm
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 1.4mm
- Continuous Collector Current :
- 2.5A
- Datasheets
- ZXT11N20DFTA

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXT11N20DFTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 90mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 250mA, 2.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 2.5A to achieve high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2.5A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2.5A volts.
ZXT11N20DFTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 130mV @ 250mA, 2.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 2.5A
a transition frequency of 160MHz
ZXT11N20DFTA Applications
There are a lot of Diodes Incorporated
ZXT11N20DFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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