ZXT11N20DFTA
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- Mfr.Part #
- ZXT11N20DFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2.5A SOT23-3
- Stock
- 1,801
- In Stock ：
- 1,801
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 806mW
- Mount :
- Surface Mount
- Max Power Dissipation :
- 625mW
- Length :
- 3.05mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 90mV
- Lead Free :
- Lead Free
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZXT11N20D
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 160MHz
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7.5V
- Collector Base Voltage (VCBO) :
- 40V
- Continuous Collector Current :
- 2.5A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Height :
- 1mm
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 250mA, 2.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 160MHz
- Current Rating :
- 2.5A
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 2.5A
- Datasheets
- ZXT11N20DFTA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXT11N20DFTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 90mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 250mA, 2.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 2.5A to achieve high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2.5A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2.5A volts.
ZXT11N20DFTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 130mV @ 250mA, 2.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 2.5A
a transition frequency of 160MHz
ZXT11N20DFTA Applications
There are a lot of Diodes Incorporated
ZXT11N20DFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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