ZVP3310ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

625mW Ta

Rise Time :

8ns

Drain to Source Voltage (Vdss) :

100V

Current Rating :

-140mA

Lead Free :

Lead Free

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Package / Case :

E-Line-3

Number of Elements :

1

Drain to Source Breakdown Voltage :

-100V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-W3

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Turn-Off Delay Time :

8 ns

Weight :

453.59237mg

JESD-609 Code :

e3

Mounting Type :

Through Hole

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

140mA Ta

Transistor Element Material :

SILICON

FET Type :

P-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Power Dissipation :

625mW

Continuous Drain Current (ID) :

140mA

Voltage - Rated DC :

-100V

Published :

2012

Fall Time (Typ) :

8 ns

Rds On (Max) @ Id, Vgs :

20 Ω @ 150mA, 10V

Element Configuration :

Single

Qualification Status :

Not Qualified

Pin Count :

3