ZVP3310ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Power Dissipation-Max :

625mW Ta

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Weight :

453.59237mg

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Wire

FET Type :

P-Channel

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

140mA Ta

Continuous Drain Current (ID) :

140mA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Current Rating :

-140mA

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

20 Ω @ 150mA, 10V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Package / Case :

E-Line-3

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-100V

Pin Count :

3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-W3

Lead Free :

Lead Free

Rise Time :

8ns

Power Dissipation :

625mW

Vgs (Max) :

±20V

Turn-Off Delay Time :

8 ns

JESD-609 Code :

e3

Reach Compliance Code :

Unknown