ZVP3310A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.01mm

Lead Free :

Lead Free

FET Type :

P-Channel

Power Dissipation-Max :

625mW Ta

Mount :

Through Hole

Published :

2006

Resistance :

20Ohm

Drain to Source Voltage (Vdss) :

100V

Weight :

453.59237mg

Rise Time :

8ns

Drain to Source Breakdown Voltage :

-100V

Turn On Delay Time :

8 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Current Rating :

-140mA

Pbfree Code :

yes

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

20 Ω @ 150mA, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Radiation Hardening :

No

Number of Terminations :

3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

140mA

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Width :

2.41mm

REACH SVHC :

No SVHC

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

260

Length :

4.77mm

Feedback Cap-Max (Crss) :

5 pF

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-100V

Pin Count :

3

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Turn-Off Delay Time :

8 ns

Fall Time (Typ) :

8 ns

Terminal Finish :

Matte Tin (Sn)

Packaging :

Bulk

Number of Channels :

1

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current - Continuous Drain (Id) @ 25°C :

140mA Ta

Element Configuration :

Single

Power Dissipation :

625mW