ZVP3306ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-60V

Mount :

Through Hole

Fall Time (Typ) :

8 ns

Packaging :

Tape and Box (TB)

Package / Case :

E-Line-3

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

ECCN Code :

EAR99

Weight :

453.59237mg

Qualification Status :

Not Qualified

Power Dissipation :

625mW

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Current Rating :

-160mA

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-W3

Published :

2012

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Turn-Off Delay Time :

8 ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 18V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

60V

Turn On Delay Time :

8 ns

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

Rise Time :

8ns

Mounting Type :

Through Hole

Power Dissipation-Max :

625mW Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Wire

Continuous Drain Current (ID) :

160mA

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3