ZVP3306ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 18V

JESD-30 Code :

R-PSIP-W3

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

8 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-60V

Transistor Element Material :

SILICON

Rise Time :

8ns

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Element Configuration :

Single

Published :

2012

Power Dissipation :

625mW

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Current Rating :

-160mA

Vgs (Max) :

±20V

Power Dissipation-Max :

625mW Ta

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

160mA

Drain to Source Voltage (Vdss) :

60V

Number of Channels :

1

Mount :

Through Hole

Lead Free :

Lead Free

Pin Count :

3

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

Weight :

453.59237mg

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Type :

P-Channel

Package / Case :

E-Line-3