ZVP2120GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

25 Ω @ 150mA, 10V

Number of Channels :

1

Transistor Element Material :

SILICON

Mount :

Surface Mount

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

0.3A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Resistance :

25Ohm

Element Configuration :

Single

Terminal Position :

Dual

Fall Time (Typ) :

15 ns

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2W Ta

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Terminal Form :

Gull wing

Pin Count :

4

Height :

1.65mm

Continuous Drain Current (ID) :

200mA

Drain to Source Breakdown Voltage :

-200V

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Turn On Delay Time :

7 ns

Weight :

7.994566mg

Power Dissipation :

2W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Lead Free :

Lead Free

Published :

2006

Rise Time :

7ns

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

12 ns

Case Connection :

DRAIN

Length :

6.7mm