ZVP2106GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

450mA

Reach Compliance Code :

Unknown

FET Type :

P-Channel

Width :

3.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

4

Voltage - Rated DC :

-60V

Number of Elements :

1

JESD-609 Code :

e3

Vgs (Max) :

±20V

Turn On Delay Time :

7 ns

Power Dissipation :

2W

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

12 ns

Fall Time (Typ) :

15 ns

Number of Terminations :

4

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Length :

6.7mm

Drain-source On Resistance-Max :

5Ohm

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.45A

Number of Channels :

1

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 18V

Power Dissipation-Max :

2W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

7.994566mg

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Current Rating :

-450mA

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Height :

1.65mm

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Rise Time :

15ns

Published :

2012

Pulsed Drain Current-Max (IDM) :

4A