ZVP2106AS

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Width :

2.41mm

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Resistance :

5Ohm

Voltage - Rated DC :

-60V

RoHS Status :

ROHS3 Compliant

Published :

1997

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

280mA

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Box (TB)

Length :

4.77mm

Number of Pins :

3

Pin Count :

3

Mount :

Surface Mount, Through Hole

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.28A

Power Dissipation-Max :

700mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 18V

FET Type :

P-Channel

Pbfree Code :

yes

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

Height :

4.01mm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Turn-Off Delay Time :

12 ns

Rise Time :

15ns

Drain to Source Breakdown Voltage :

-60V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Package / Case :

E-Line-3

Current Rating :

-280mA

Turn On Delay Time :

7 ns

Number of Channels :

1

Weight :

453.59237mg

Radiation Hardening :

No

Power Dissipation :

700mW

Time@Peak Reflow Temperature-Max (s) :

40