ZVP2120ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

0.12A

Number of Elements :

1

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

700mW Ta

Vgs (Max) :

±20V

Fall Time (Typ) :

15 ns

Drain to Source Breakdown Voltage :

-200V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Rds On (Max) @ Id, Vgs :

25 Ω @ 150mA, 10V

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Wire

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

12 ns

Published :

2012

Rise Time :

15ns

FET Type :

P-Channel

Power Dissipation :

700mW

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Mount :

Through Hole

Voltage - Rated DC :

-200V

JESD-609 Code :

e3

Current Rating :

-120mA

JESD-30 Code :

R-PSIP-W3

Package / Case :

E-Line-3

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Pin Count :

3

Continuous Drain Current (ID) :

120mA

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V