ZVP2106ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

280mA

Fall Time (Typ) :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 18V

ECCN Code :

EAR99

Power Dissipation :

700mW

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-W3

Gate to Source Voltage (Vgs) :

20V

Weight :

453.59237mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-60V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Published :

2012

Transistor Application :

SWITCHING

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Lead Free :

Lead Free

Number of Terminations :

3

Reach Compliance Code :

Unknown

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Package / Case :

E-Line-3

Current Rating :

-280mA

Power Dissipation-Max :

700mW Ta

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Turn-Off Delay Time :

12 ns

Terminal Form :

Wire

Drain-source On Resistance-Max :

5Ohm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

FET Type :

P-Channel

Turn On Delay Time :

7 ns

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V