ZVP2120ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 1mA

JESD-609 Code :

e3

Terminal Form :

Wire

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

700mW

Turn-Off Delay Time :

12 ns

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-W3

Published :

2012

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Rise Time :

15ns

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Package / Case :

E-Line-3

Current Rating :

-120mA

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

120mA

Weight :

453.59237mg

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

-200V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Power Dissipation-Max :

700mW Ta

Voltage - Rated DC :

-200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lead Free :

Lead Free

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

25 Ω @ 150mA, 10V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Drain to Source Voltage (Vdss) :

200V

Pin Count :

3

Number of Channels :

1

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V