ZVP2120ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

25 Ω @ 150mA, 10V

Pin Count :

3

Factory Lead Time :

10 Weeks

Number of Pins :

3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Drain to Source Voltage (Vdss) :

200V

Weight :

453.59237mg

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

120mA

Voltage - Rated DC :

-200V

FET Type :

P-Channel

Height :

4.01mm

Power Dissipation-Max :

700mW Ta

Published :

2001

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

REACH SVHC :

No SVHC

Turn-Off Delay Time :

12 ns

Time@Peak Reflow Temperature-Max (s) :

40

Width :

2.41mm

Vgs (Max) :

±20V

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Length :

4.77mm

ECCN Code :

EAR99

Current Rating :

-120mA

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Terminal Form :

Wire

Power Dissipation :

700mW

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Channels :

1

Rise Time :

15ns

Number of Elements :

1

Drain to Source Breakdown Voltage :

-200V

Gate to Source Voltage (Vgs) :

20V