ZVN4525E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

1.25 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Height :

1.3mm

ECCN Code :

EAR99

Length :

3.1mm

Weight :

14.996898mg

JESD-30 Code :

R-PDSO-G6

Number of Elements :

1

Mount :

Surface Mount

Current Rating :

230mA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.1W

Power Dissipation-Max :

1.1W Ta

Gate to Source Voltage (Vgs) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

1.7ns

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

3.65nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

250V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.23A

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

8.5 Ω @ 500mA, 10V

Width :

1.8mm

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Fall Time (Typ) :

1.7 ns

Continuous Drain Current (ID) :

230mA

Turn-Off Delay Time :

11.4 ns

Mounting Type :

Surface Mount

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

72pF @ 25V

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6

Vgs(th) (Max) @ Id :

1.8V @ 1mA

Transistor Application :

SWITCHING

Vgs (Max) :

±40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

250V