ZVN4106FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Width :

1.4mm

Reach Compliance Code :

Unknown

Weight :

7.994566mg

Number of Terminations :

3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.2A

Height :

1.02mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 500mA, 10V

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Current Rating :

200mA

Input Capacitance (Ciss) (Max) @ Vds :

35pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

350mW Ta

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 1mA

Fall Time (Typ) :

7 ns

Feedback Cap-Max (Crss) :

8 pF

Length :

3.04mm

ECCN Code :

EAR99

Turn On Delay Time :

5 ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

200mA

Turn-Off Delay Time :

6 ns

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rise Time :

7ns

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Power Dissipation :

330mW

Number of Channels :

1

Published :

2012

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40