ZVN4206GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Length :

6.7mm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

8 ns

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 1mA

FET Type :

N-Channel

Factory Lead Time :

17 Weeks

Voltage - Rated DC :

60V

Number of Terminations :

4

Number of Channels :

1

Power Dissipation-Max :

2W Ta

Radiation Hardening :

No

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

12 ns

Pin Count :

4

Power Dissipation :

2W

Width :

3.7mm

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Current Rating :

1A

Transistor Application :

SWITCHING

Additional Feature :

FAST SWITCHING

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1A

Weight :

7.994566mg

Lead Free :

Lead Free

Mount :

Surface Mount

Continuous Drain Current (ID) :

1A

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Pbfree Code :

No

Element Configuration :

Single

Contact Plating :

Tin

Mounting Type :

Surface Mount

Resistance :

1Ohm

Published :

2006

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Rise Time :

12ns

Height :

1.65mm