ZVN4206GVTC
- Mfr.Part #
- ZVN4206GVTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1A SOT223
- Stock
- 2,448
- In Stock :
- 2,448
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PDSO-G4
- Drain-source On Resistance-Max :
- 1Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- Power Dissipation-Max :
- 2W Ta
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 8A
- Continuous Drain Current (ID) :
- 1A
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 1A
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Reach Compliance Code :
- Unknown
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 8 ns
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Rise Time :
- 12ns
- Published :
- 2012
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 100pF @ 25V
- Turn-Off Delay Time :
- 12 ns
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Current Rating :
- 1A
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 2W
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Length :
- 6.7mm
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- FAST SWITCHING
- Fall Time (Typ) :
- 15 ns
- Datasheets
- ZVN4206GVTC

N-Channel Tape & Reel (TR) 1 Ω @ 1.5A, 10V ±20V 100pF @ 25V TO-261-4, TO-261AA
ZVN4206GVTC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 100pF @ 25V.This device conducts a continuous drain current (ID) of 1A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1A.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
ZVN4206GVTC Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 8A.
ZVN4206GVTC Applications
There are a lot of Diodes Incorporated
ZVN4206GVTC applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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