ZVN4206AVSTOB
- Mfr.Part #
- ZVN4206AVSTOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 600MA E-LINE
- Stock
- 40,687
- In Stock :
- 40,687
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.01mm
- Supplier Device Package :
- E-Line (TO-92 compatible)
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- E-Line-3
- Weight :
- 453.59237mg
- Element Configuration :
- Single
- Current Rating :
- 600mA
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 60V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 1.5Ohm
- Rds On Max :
- 1 Ω
- Turn On Delay Time :
- 8 ns
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Ta
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.41mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 100pF @ 25V
- Turn-Off Delay Time :
- 12 ns
- Input Capacitance :
- 100pF
- Length :
- 4.77mm
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 700mW
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 12 ns
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Continuous Drain Current (ID) :
- 600mA
- Power Dissipation-Max :
- 700mW Ta
- Rise Time :
- 12ns
- Datasheets
- ZVN4206AVSTOB
ZVN4206AVSTOB Documents
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N-Channel Tape & Reel (TR) 1Ohm @ 1.5A, 10V ±20V 100pF @ 25V 60V E-Line-3
ZVN4206AVSTOB Overview
A device's maximal input capacitance is 100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 600mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
ZVN4206AVSTOB Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 1.5Ohm
a 60V drain to source voltage (Vdss)
ZVN4206AVSTOB Applications
There are a lot of Diodes Incorporated
ZVN4206AVSTOB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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