ZVN4424ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Power Dissipation :

750mW

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

2.5 ns

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

240V

Pin Count :

3

Gate to Source Voltage (Vgs) :

40V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Lead Free :

Lead Free

Rise Time :

5ns

Continuous Drain Current (ID) :

260mA

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Mounting Type :

Through Hole

Weight :

453.59237mg

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

750mW Ta

ECCN Code :

EAR99

Mount :

Through Hole

Current Rating :

260mA

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Voltage - Rated DC :

240V

Turn-Off Delay Time :

40 ns

Vgs (Max) :

±40V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.26A

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

JESD-30 Code :

R-PSIP-W3

Vgs(th) (Max) @ Id :

1.8V @ 1mA

Drain-source On Resistance-Max :

6Ohm

Package / Case :

E-Line-3

Fall Time (Typ) :

5 ns

Rds On (Max) @ Id, Vgs :

5.5 Ω @ 500mA, 10V

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant