ZVN4310ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Vgs (Max) :

±20V

Package / Case :

E-Line-3

Voltage - Rated DC :

100V

Drain-source On Resistance-Max :

0.65Ohm

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSIP-W3

FET Type :

N-Channel

ECCN Code :

EAR99

Rise Time :

25ns

Power Dissipation :

850mW

Reach Compliance Code :

Unknown

Number of Channels :

1

Transistor Application :

SWITCHING

Published :

1997

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

900mA

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

8 ns

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

25 ns

Terminal Form :

Wire

Weight :

453.59237mg

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Elements :

1

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Rds On (Max) @ Id, Vgs :

500m Ω @ 3A, 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

Turn-Off Delay Time :

30 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

850mW Ta

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Drain Current-Max (Abs) (ID) :

0.9A

Operating Temperature :

-55°C~150°C TJ

Current Rating :

900mA

Qualification Status :

Not Qualified

Pin Count :

3

Number of Terminations :

3