ZVN4310ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

25ns

Element Configuration :

Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

900mA

Package / Case :

E-Line-3

Drain-source On Resistance-Max :

0.65Ohm

Published :

1997

Mount :

Through Hole

ECCN Code :

EAR99

Terminal Form :

Wire

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

0.9A

Fall Time (Typ) :

25 ns

Packaging :

Tape and Reel (TR)

Current Rating :

900mA

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

500m Ω @ 3A, 10V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

30 ns

Power Dissipation :

850mW

JESD-30 Code :

R-PSIP-W3

Terminal Finish :

MATTE TIN

Number of Elements :

1

Power Dissipation-Max :

850mW Ta

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8 ns

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

3V @ 1mA

Transistor Application :

SWITCHING

Pin Count :

3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Number of Terminations :

3

Weight :

453.59237mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Voltage - Rated DC :

100V

Number of Channels :

1

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

900mA Ta