ZVN4310A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

JESD-609 Code :

e3

Voltage - Rated DC :

100V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Rise Time :

25ns

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

500m Ω @ 3A, 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

850mW

Lead Free :

Lead Free

Threshold Voltage :

3V

Mounting Type :

Through Hole

Number of Elements :

1

Number of Channels :

1

Width :

2.41mm

Published :

1997

Pin Count :

3

Vgs (Max) :

±20V

Length :

4.77mm

Terminal Finish :

Matte Tin (Sn)

Resistance :

500MOhm

Mount :

Through Hole

Terminal Form :

Wire

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 1mA

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

E-Line

Power Dissipation-Max :

850mW Ta

Number of Pins :

3

Height :

6.51mm

Turn-Off Delay Time :

30 ns

Drain Current-Max (Abs) (ID) :

0.9A

Continuous Drain Current (ID) :

900mA

Packaging :

Bulk

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current Rating :

900mA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

25 ns

Factory Lead Time :

17 Weeks

Pbfree Code :

No

Transistor Element Material :

SILICON

Weight :

453.59237mg

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

8 ns

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No