ZVN4306GVTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation :

3W

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Voltage - Rated DC :

60V

Mounting Type :

Surface Mount

Current Rating :

2.1A

Number of Terminations :

4

Case Connection :

DRAIN

Width :

3.7mm

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Number of Elements :

1

Power Dissipation-Max :

3W Ta

Weight :

7.994566mg

Terminal Form :

Gull wing

Turn-Off Delay Time :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Published :

2006

Height :

1.65mm

Rise Time :

25ns

Mount :

Surface Mount

Length :

6.7mm

JESD-30 Code :

R-PDSO-G4

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.33Ohm

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

Not Qualified

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

2.1A

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA