ZVN4306AVSTOA
- Mfr.Part #
- ZVN4306AVSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1.1A E-LINE
- Stock
- 16,674
- In Stock :
- 16,674
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 3A, 10V
- Published :
- 2016
- Min Operating Temperature :
- -55°C
- REACH SVHC :
- No SVHC
- Width :
- 2.41mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn On Delay Time :
- 8 ns
- Power Dissipation :
- 850mW
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 60V
- Power Dissipation-Max :
- 850mW Ta
- Element Configuration :
- Single
- Length :
- 4.77mm
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 4.01mm
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Drain to Source Resistance :
- 450mOhm
- Input Capacitance :
- 350pF
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Resistance :
- 330mOhm
- Current Rating :
- 1.1A
- Fall Time (Typ) :
- 25 ns
- Continuous Drain Current (ID) :
- 1.1A
- Turn-Off Delay Time :
- 30 ns
- Mounting Type :
- Through Hole
- Rise Time :
- 25ns
- Supplier Device Package :
- E-Line (TO-92 compatible)
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Package / Case :
- E-Line-3
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On Max :
- 330 mΩ
- Weight :
- 453.59237mg
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Datasheets
- ZVN4306AVSTOA
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N-Channel Tape & Reel (TR) 330mOhm @ 3A, 10V ±20V 350pF @ 25V 60V E-Line-3
ZVN4306AVSTOA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 450mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
ZVN4306AVSTOA Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 450mOhm
a 60V drain to source voltage (Vdss)
ZVN4306AVSTOA Applications
There are a lot of Diodes Incorporated
ZVN4306AVSTOA applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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