ZVN4306ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Rise Time :

25ns

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 1mA

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Height :

4.01mm

Drain-source On Resistance-Max :

0.33Ohm

Peak Reflow Temperature (Cel) :

260

Length :

4.77mm

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Package / Case :

E-Line-3

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

30 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Feedback Cap-Max (Crss) :

30 pF

FET Type :

N-Channel

JESD-30 Code :

O-PBCY-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Weight :

453.59237mg

Terminal Position :

BOTTOM

Turn On Delay Time :

8 ns

Width :

2.41mm

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

850mW

Power Dissipation-Max :

850mW Ta

Pbfree Code :

No

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

25 ns

Vgs (Max) :

±20V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.1A

Current Rating :

1.1A