ZVN4306ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.1A

Number of Elements :

1

Published :

2006

Weight :

453.59237mg

Length :

4.77mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

850mW Ta

Element Configuration :

Single

JESD-30 Code :

R-PSIP-W3

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Number of Channels :

1

Lead Free :

Lead Free

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Wire

Current Rating :

1.1A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Width :

2.41mm

Peak Reflow Temperature (Cel) :

260

Rise Time :

25ns

JESD-609 Code :

e3

Power Dissipation :

850mW

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.45Ohm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

330m Ω @ 3A, 10V

Package / Case :

E-Line-3

Radiation Hardening :

No

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Fall Time (Typ) :

25 ns

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Height :

4.01mm

Drain to Source Breakdown Voltage :

60V

Mount :

Through Hole

Turn-Off Delay Time :

30 ns