ZVN4210GTC

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Mfr.Part #
ZVN4210GTC
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 800MA SOT223
Stock
38,184
In Stock :
38,184

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Published :
2006
FET Type :
N-Channel
Power Dissipation-Max :
2W Ta
Gate to Source Voltage (Vgs) :
20V
Voltage - Rated DC :
100V
Turn-Off Delay Time :
20 ns
Packaging :
Tape and Reel (TR)
Drain to Source Breakdown Voltage :
100V
Fall Time (Typ) :
30 ns
Mount :
Surface Mount
Vgs (Max) :
±20V
Pin Count :
4
Number of Channels :
1
Weight :
7.994566mg
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
800mA Ta
Input Capacitance (Ciss) (Max) @ Vds :
100pF @ 25V
Rise Time :
8ns
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 1.5A, 10V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Turn On Delay Time :
4 ns
Current Rating :
800mA
Continuous Drain Current (ID) :
800mA
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Package / Case :
TO-261-4, TO-261AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2W
RoHS Status :
RoHS Compliant
Datasheets
ZVN4210GTC
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated ZVN4210GTC from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, ZVN4210GTC pinout, ZVN4210GTC datasheet PDF, ZVN4210GTC amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated ZVN4210GTC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZVN4210GTC


N-Channel Tape & Reel (TR) 1.5 Ω @ 1.5A, 10V ±20V 100pF @ 25V TO-261-4, TO-261AA

ZVN4210GTC Overview


A device's maximal input capacitance is 100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 800mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).

ZVN4210GTC Features


a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns


ZVN4210GTC Applications


There are a lot of Diodes Incorporated
ZVN4210GTC applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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