ZVN4210GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Rise Time :

8ns

Height :

1.65mm

Number of Pins :

4

Turn-Off Delay Time :

20 ns

Pbfree Code :

No

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Terminal Position :

Dual

Resistance :

1.8Ohm

Drain Current-Max (Abs) (ID) :

0.8A

Radiation Hardening :

No

Power Dissipation :

2W

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 10V

Voltage - Rated DC :

100V

Power Dissipation-Max :

2W Ta

Number of Channels :

1

Mount :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Weight :

7.994566mg

Case Connection :

DRAIN

Length :

6.7mm

Terminal Form :

Gull wing

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

6A

Threshold Voltage :

800mV

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

800mA Ta

Fall Time (Typ) :

30 ns

Lead Free :

Lead Free

Package / Case :

TO-261-4, TO-261AA

Gate to Source Voltage (Vgs) :

20V

Current Rating :

800mA

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

ECCN Code :

EAR99

Width :

3.7mm

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

4 ns

Continuous Drain Current (ID) :

800mA