ZVN4210A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Rise Time :

8ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

700mW

FET Type :

N-Channel

Threshold Voltage :

2.4V

Published :

1997

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Resistance :

1.5Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Current Rating :

450mA

Fall Time (Typ) :

8 ns

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Power Dissipation-Max :

700mW Ta

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Length :

4.95mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Weight :

453.59237mg

Turn On Delay Time :

4 ns

Vgs (Max) :

±20V

Number of Channels :

1

Height :

4.95mm

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 10V

Number of Terminations :

3

Radiation Hardening :

No

Continuous Drain Current (ID) :

450mA

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Form :

Wire

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.45A

Element Configuration :

Single

Packaging :

Bulk