ZTX957
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- Mfr.Part #
- ZTX957
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 4.01mm
- Collector Emitter Breakdown Voltage :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Operating Temperature :
- -55°C~200°C TJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Transition Frequency :
- 85MHz
- Gain Bandwidth Product :
- 85MHz
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- ZTX957
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 300mA, 1A
- Continuous Collector Current :
- -1A
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- Width :
- 2.41mm
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Weight :
- 453.59237mg
- Published :
- 2006
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Frequency :
- 85MHz
- Package / Case :
- E-Line-3
- Collector Emitter Voltage (VCEO) :
- 300V
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.2W
- Voltage - Rated DC :
- -300V
- Current Rating :
- -1A
- Factory Lead Time :
- 11 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Max Power Dissipation :
- 1.2W
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Length :
- 4.77mm
- Collector Emitter Saturation Voltage :
- -140mV
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 330V
- Max Breakdown Voltage :
- 300V
- Datasheets
- ZTX957
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX957 Overview
DC current gain in this device equals 100 @ 500mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -140mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 300mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 85MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 1A volts.
ZTX957 Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 200mV @ 300mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 85MHz
ZTX957 Applications
There are a lot of Diodes Incorporated
ZTX957 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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