ZTX949
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- Mfr.Part #
- ZTX949
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 4.5A E-LINE
- Stock
- 8,288
- In Stock ：
- 8,288
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Frequency :
- 100MHz
- Width :
- 2.41mm
- Length :
- 4.77mm
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- PNP
- Pbfree Code :
- No
- Current Rating :
- -4.5A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Bulk
- Terminal Form :
- Wire
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Weight :
- 453.59237mg
- Max Power Dissipation :
- 1.2W
- Mount :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation :
- 1.2W
- Voltage - Rated DC :
- -30V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 50V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Continuous Collector Current :
- -4.5A
- Max Collector Current :
- 4.5A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transition Frequency :
- 100MHz
- Package / Case :
- E-Line-3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Element Material :
- SILICON
- Power - Max :
- 1.58W
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Base Part Number :
- ZTX949
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 5A
- Datasheets
- ZTX949
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX949 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 5A.Maintaining the continuous collector voltage at -4.5A is essential for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4.5A).100MHz is present in the transition frequency.Maximum collector currents can be below 4.5A volts.
ZTX949 Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 320mV @ 300mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 100MHz
ZTX949 Applications
There are a lot of Diodes Incorporated
ZTX949 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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