ZTX949
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- Mfr.Part #
- ZTX949
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 4.5A E-LINE
- Stock
- 8,288
- In Stock ：
- 8,288
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 100MHz
- Max Collector Current :
- 4.5A
- Power - Max :
- 1.58W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Pin Count :
- 3
- Published :
- 2006
- Factory Lead Time :
- 15 Weeks
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -4.5A
- Weight :
- 453.59237mg
- Emitter Base Voltage (VEBO) :
- -6V
- Length :
- 4.77mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- ZTX949
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 300mA, 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Power Dissipation :
- 1.2W
- Current Rating :
- -4.5A
- Width :
- 2.41mm
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Voltage - Rated DC :
- -30V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.2W
- Transistor Type :
- PNP
- Package / Case :
- E-Line-3
- Datasheets
- ZTX949
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX949 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 300mA, 5A.Maintaining the continuous collector voltage at -4.5A is essential for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4.5A).100MHz is present in the transition frequency.Maximum collector currents can be below 4.5A volts.
ZTX949 Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 320mV @ 300mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 100MHz
ZTX949 Applications
There are a lot of Diodes Incorporated
ZTX949 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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