ZTX951STOA
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- Mfr.Part #
- ZTX951STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A E-LINE
- Stock
- 45,500
- In Stock ：
- 45,500
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.77mm
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 1.2W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Current Rating :
- -4A
- Published :
- 2006
- Gain Bandwidth Product :
- 120MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.2W
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Package / Case :
- E-Line-3, Formed Leads
- Frequency :
- 120MHz
- Continuous Collector Current :
- -4A
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~200°C TJ
- Weight :
- 453.59237mg
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 120MHz
- Base Part Number :
- ZTX951
- Mount :
- Through Hole
- Height :
- 4.01mm
- Max Collector Current :
- 4A
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -6V
- Width :
- 2.41mm
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Datasheets
- ZTX951STOA
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX951STOA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 400mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).120MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
ZTX951STOA Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -4A
a transition frequency of 120MHz
ZTX951STOA Applications
There are a lot of Diodes Incorporated
ZTX951STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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