ZTX951
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- Mfr.Part #
- ZTX951
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A E-LINE
- Stock
- 4,767
- In Stock ：
- 4,767
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Transition Frequency :
- 120MHz
- Pin Count :
- 3
- Current Rating :
- -4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Package / Case :
- E-Line-3
- Power Dissipation :
- 1.2W
- Width :
- 2.41mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Continuous Collector Current :
- -4A
- Mount :
- Through Hole
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Length :
- 4.77mm
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- ZTX951
- Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 4A
- Published :
- 1997
- Max Power Dissipation :
- 1.2W
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~200°C TJ
- Gain Bandwidth Product :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 300mV
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Voltage - Rated DC :
- -60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Weight :
- 453.59237mg
- Datasheets
- ZTX951
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PNP -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX951 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 400mA, 4A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 4A volts.
ZTX951 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 120MHz
ZTX951 Applications
There are a lot of Diodes Incorporated
ZTX951 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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