ZTX857STOB
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- Mfr.Part #
- ZTX857STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 3A E-LINE
- Stock
- 49,065
- In Stock ：
- 49,065
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- MATTE TIN
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSIP-W3
- Collector Emitter Breakdown Voltage :
- 300V
- Transition Frequency :
- 80MHz
- Max Power Dissipation :
- 1.2W
- Length :
- 4.77mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 300V
- Continuous Collector Current :
- 3A
- Base Part Number :
- ZTX857
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- E-Line-3
- Weight :
- 453.59237mg
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 5A
- Qualification Status :
- Not Qualified
- Height :
- 4.01mm
- Terminal Form :
- Wire
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.29.00.75
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Reach Compliance Code :
- Unknown
- Gain Bandwidth Product :
- 80MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 3A
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 330V
- Number of Elements :
- 1
- Width :
- 2.41mm
- Datasheets
- ZTX857STOB
ZTX857STOB Documents
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Reel (TR) Through Hole
ZTX857STOB Overview
DC current gain in this device equals 100 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 600mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 80MHz.In extreme cases, the collector current can be as low as 3A volts.
ZTX857STOB Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857STOB Applications
There are a lot of Diodes Incorporated
ZTX857STOB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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