ZTX696BSTOA
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- Mfr.Part #
- ZTX696BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A E-LINE
- Stock
- 38,483
- In Stock ：
- 38,483
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 250mV
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Terminal Form :
- Wire
- Element Configuration :
- Single
- Base Part Number :
- ZTX696B
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 70MHz
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSIP-W3
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 180V
- Transition Frequency :
- 70MHz
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- MATTE TIN
- Max Power Dissipation :
- 1W
- Continuous Collector Current :
- 500mA
- Transistor Type :
- NPN
- HTS Code :
- 8541.29.00.75
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 250mV
- Collector Base Voltage (VCBO) :
- 180V
- Voltage - Rated DC :
- 180V
- Package / Case :
- E-Line-3, Formed Leads
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZTX696BSTOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX696BSTOA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 70MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX696BSTOA Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
ZTX696BSTOA Applications
There are a lot of Diodes Incorporated
ZTX696BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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