ZTX696BSTOA
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- Mfr.Part #
- ZTX696BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A E-LINE
- Stock
- 38,483
- In Stock ：
- 38,483
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 180V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSIP-W3
- Terminal Finish :
- MATTE TIN
- Collector Base Voltage (VCBO) :
- 180V
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 250mV
- Current Rating :
- 500mA
- Max Collector Current :
- 500mA
- Package / Case :
- E-Line-3, Formed Leads
- Continuous Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 70MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Base Part Number :
- ZTX696B
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 70MHz
- Lead Free :
- Lead Free
- HTS Code :
- 8541.29.00.75
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 180V
- Datasheets
- ZTX696BSTOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX696BSTOA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 70MHz.During maximum operation, collector current can be as low as 500mA volts.
ZTX696BSTOA Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
ZTX696BSTOA Applications
There are a lot of Diodes Incorporated
ZTX696BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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