ZTX603
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- Mfr.Part #
- ZTX603
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A E-LINE
- Stock
- 30,929
- In Stock ：
- 30,929
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Width :
- 2.41mm
- Base Part Number :
- ZTX603
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 10V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Continuous Collector Current :
- 1A
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Package / Case :
- E-Line-3
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN - Darlington
- Terminal Form :
- Wire
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Weight :
- 453.59237mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~200°C TJ
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency - Transition :
- 150MHz
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1mA, 1A
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Height :
- 4.01mm
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA
- Length :
- 4.77mm
- Current Rating :
- 1A
- Datasheets
- ZTX603
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NPN - Darlington -55°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX603 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 1mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 10V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX603 Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX603 Applications
There are a lot of Diodes Incorporated
ZTX603 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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