ZTX601STZ
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- Mfr.Part #
- ZTX601STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN DARL 160V 1A E-LINE
- Stock
- 2,100
- In Stock ：
- 2,100
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Voltage (VCEO) :
- 160V
- Collector Emitter Breakdown Voltage :
- 160V
- Frequency - Transition :
- 250MHz
- Collector Emitter Saturation Voltage :
- 1.1V
- Polarity :
- NPN
- Max Collector Current :
- 1A
- Length :
- 4.77mm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Height :
- 4.01mm
- Width :
- 2.41mm
- Published :
- 2006
- Max Power Dissipation :
- 1W
- Base Part Number :
- ZTX601
- Reference Standard :
- CECC
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 150MHz
- Package / Case :
- E-Line-3, Formed Leads
- Voltage - Rated DC :
- 160V
- Operating Temperature :
- -55°C~200°C TJ
- Pin Count :
- 3
- Packaging :
- Tape and Box (TB)
- Weight :
- 453.59237mg
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 10mA, 1A
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Current - Collector Cutoff (Max) :
- 10μA
- Datasheets
- ZTX601STZ
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NPN - Darlington -55°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX601STZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 10mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 1A volts.
ZTX601STZ Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX601STZ Applications
There are a lot of Diodes Incorporated
ZTX601STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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