ZTX603STZ
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- Mfr.Part #
- ZTX603STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A E-LINE
- Stock
- 12,188
- In Stock ：
- 12,188
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 150MHz
- Reference Standard :
- CECC
- Mounting Type :
- Through Hole
- Base Part Number :
- ZTX603
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 80V
- Weight :
- 453.59237mg
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Continuous Collector Current :
- 1A
- Transistor Type :
- NPN - Darlington
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 10V
- Operating Temperature :
- -55°C~200°C TJ
- Polarity :
- NPN
- Height :
- 4.01mm
- REACH SVHC :
- No SVHC
- Current Rating :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Length :
- 4.77mm
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 150MHz
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Wire
- Width :
- 2.41mm
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- E-Line-3, Formed Leads
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1mA, 1A
- Max Collector Current :
- 1A
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZTX603STZ
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NPN - Darlington -55°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX603STZ Overview
In this device, the DC current gain is 2000 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1mA, 1A.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX603STZ Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX603STZ Applications
There are a lot of Diodes Incorporated
ZTX603STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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