ZTX601BSTOA
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- Mfr.Part #
- ZTX601BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN DARL 160V 1A E-LINE
- Stock
- 34,273
- In Stock ：
- 34,273
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Polarity :
- NPN
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN - Darlington
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZTX601
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Pin Count :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 160V
- Published :
- 2006
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10μA
- Max Collector Current :
- 1A
- Voltage - Rated DC :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 500mA 10V
- Reference Standard :
- CECC
- Frequency - Transition :
- 250MHz
- Mount :
- Through Hole
- Package / Case :
- E-Line-3, Formed Leads
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Saturation Voltage :
- 1.1V
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- Continuous Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 10mA, 1A
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 160V
- Datasheets
- ZTX601BSTOA
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NPN - Darlington -55°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX601BSTOA Overview
This device has a DC current gain of 10000 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 1.2V @ 10mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 1A volts is possible.
ZTX601BSTOA Features
the DC current gain for this device is 10000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX601BSTOA Applications
There are a lot of Diodes Incorporated
ZTX601BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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