ZTX696B
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- Mfr.Part #
- ZTX696B
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A E-LINE
- Stock
- 4,727
- In Stock ：
- 4,727
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- Continuous Collector Current :
- 500mA
- Element Configuration :
- Single
- Manufacturer Package Identifier :
- E-Line
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 180V
- Length :
- 4.77mm
- Terminal Form :
- Wire
- Max Power Dissipation :
- 1W
- Weight :
- 453.59237mg
- Height :
- 4.01mm
- Operating Temperature :
- -55°C~200°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 180V
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 180V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- JESD-609 Code :
- e3
- Width :
- 2.41mm
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- E-Line-3
- Current Rating :
- 500mA
- Voltage - Rated DC :
- 180V
- Gain Bandwidth Product :
- 70MHz
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 70MHz
- Lead Free :
- Contains Lead
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Frequency :
- 70MHz
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- ZTX696B
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZTX696B
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX696B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 200mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 5mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 70MHz.A maximum collector current of 500mA volts can be achieved.
ZTX696B Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
ZTX696B Applications
There are a lot of Diodes Incorporated
ZTX696B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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