ZTX696B
- Mfr.Part #
- ZTX696B
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A E-LINE
- Stock
- 4,727
- In Stock :
- 4,727
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Element Configuration :
- Single
- Continuous Collector Current :
- 500mA
- Published :
- 2006
- Voltage - Rated DC :
- 180V
- Collector Emitter Breakdown Voltage :
- 180V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 453.59237mg
- Width :
- 2.41mm
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 70MHz
- Terminal Form :
- Wire
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZTX696B
- Current Rating :
- 500mA
- Operating Temperature :
- -55°C~200°C TJ
- Gain Bandwidth Product :
- 70MHz
- Transistor Type :
- NPN
- Frequency :
- 70MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Power Dissipation :
- 1W
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Height :
- 4.01mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 4.77mm
- Collector Base Voltage (VCBO) :
- 180V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Pin Count :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 180V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- E-Line-3
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 15 Weeks
- Manufacturer Package Identifier :
- E-Line
- Datasheets
- ZTX696B
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX696B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 200mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 5mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 70MHz.A maximum collector current of 500mA volts can be achieved.
ZTX696B Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
ZTX696B Applications
There are a lot of Diodes Incorporated
ZTX696B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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