ZTX694BSTZ
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- Mfr.Part #
- ZTX694BSTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.5A E-LINE
- Stock
- 1,884
- In Stock ：
- 1,884
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Width :
- 2.41mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 400mA
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 120V
- Gain Bandwidth Product :
- 130MHz
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 120V
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.01mm
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Transition Frequency :
- 130MHz
- Length :
- 4.77mm
- Published :
- 2012
- Max Power Dissipation :
- 1W
- Base Part Number :
- ZTX694B
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.29.00.75
- Transistor Application :
- SWITCHING
- Weight :
- 453.59237mg
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 3
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 200mA 2V
- Element Configuration :
- Single
- Current Rating :
- 500mA
- Package / Case :
- E-Line-3, Formed Leads
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 500mA
- Datasheets
- ZTX694BSTZ
ZTX694BSTZ Documents
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX694BSTZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 200mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 130MHz.A maximum collector current of 500mA volts can be achieved.
ZTX694BSTZ Features
the DC current gain for this device is 400 @ 200mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 400mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 130MHz
ZTX694BSTZ Applications
There are a lot of Diodes Incorporated
ZTX694BSTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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