ZTX694BSTZ
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- Mfr.Part #
- ZTX694BSTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.5A E-LINE
- Stock
- 1,884
- In Stock ：
- 1,884
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 500mA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 120V
- Polarity/Channel Type :
- NPN
- Weight :
- 453.59237mg
- HTS Code :
- 8541.29.00.75
- Operating Temperature :
- -55°C~200°C TJ
- Mount :
- Through Hole
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 130MHz
- Continuous Collector Current :
- 500mA
- Width :
- 2.41mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 200mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Length :
- 4.77mm
- Voltage - Rated DC :
- 120V
- Element Configuration :
- Single
- Package / Case :
- E-Line-3, Formed Leads
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Published :
- 2012
- Current Rating :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 120V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Height :
- 4.01mm
- Collector Emitter Saturation Voltage :
- 500mV
- Base Part Number :
- ZTX694B
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 130MHz
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 400mA
- ECCN Code :
- EAR99
- Datasheets
- ZTX694BSTZ
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX694BSTZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 400 @ 200mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 130MHz.A maximum collector current of 500mA volts can be achieved.
ZTX694BSTZ Features
the DC current gain for this device is 400 @ 200mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 400mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 130MHz
ZTX694BSTZ Applications
There are a lot of Diodes Incorporated
ZTX694BSTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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