ZTX692BSTOA
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- Mfr.Part #
- ZTX692BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 70V 1A E-LINE
- Stock
- 45,675
- In Stock ：
- 45,675
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 500mA 2V
- Width :
- 2.41mm
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 1A
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 70V
- Terminal Form :
- Wire
- Gain Bandwidth Product :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 70V
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Weight :
- 453.59237mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2008
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 1A
- JESD-30 Code :
- R-PSIP-W3
- Base Part Number :
- ZTX692B
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Length :
- 4.77mm
- Current Rating :
- 1A
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.75
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Height :
- 4.01mm
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- E-Line-3, Formed Leads
- Voltage - Rated DC :
- 70V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Datasheets
- ZTX692BSTOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX692BSTOA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX692BSTOA Features
the DC current gain for this device is 400 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX692BSTOA Applications
There are a lot of Diodes Incorporated
ZTX692BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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