ZTX692B
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- Mfr.Part #
- ZTX692B
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 70V 1A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 70V
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 1A
- REACH SVHC :
- No SVHC
- Current Rating :
- 1A
- Collector Base Voltage (VCBO) :
- 70V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 70V
- Width :
- 2.41mm
- Frequency :
- 150MHz
- Continuous Collector Current :
- 1A
- Lead Free :
- Lead Free
- Length :
- 4.77mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Weight :
- 453.59237mg
- Manufacturer Package Identifier :
- E-Line
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 500mA 2V
- Package / Case :
- E-Line-3
- Collector Emitter Saturation Voltage :
- 500mV
- Height :
- 4.01mm
- Terminal Form :
- Wire
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 70V
- Operating Temperature :
- -55°C~200°C TJ
- Transition Frequency :
- 150MHz
- Base Part Number :
- ZTX692B
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Datasheets
- ZTX692B
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX692B Overview
In this device, the DC current gain is 400 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 1A.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX692B Features
the DC current gain for this device is 400 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX692B Applications
There are a lot of Diodes Incorporated
ZTX692B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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