ZTX688BSTOA
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- Mfr.Part #
- ZTX688BSTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A E-LINE
- Stock
- 40,549
- In Stock ：
- 40,549
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 350mV
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- HTS Code :
- 8541.29.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 20mA, 3A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 12V
- JESD-30 Code :
- R-PSIP-W3
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Base Part Number :
- ZTX688B
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Pin Count :
- 3
- Terminal Finish :
- MATTE TIN
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 350mV
- Current Rating :
- 3A
- Height :
- 4.01mm
- Width :
- 2.41mm
- Collector Base Voltage (VCBO) :
- 12V
- Continuous Collector Current :
- 3A
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Length :
- 4.77mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 12V
- Max Collector Current :
- 3A
- Package / Case :
- E-Line-3, Formed Leads
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 453.59237mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- ZTX688BSTOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX688BSTOA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 350mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 20mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 3A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
ZTX688BSTOA Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
ZTX688BSTOA Applications
There are a lot of Diodes Incorporated
ZTX688BSTOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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